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WHAT IS THE DIFFERENCE BETWEEN GUNN DIODE AND IMPATT DIODE(5MARKS)?

on 2010-11-21 20:44:30   by debojyoti   on Electronics & Communication  1 answers

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on 2010-11-21 10:30:00  

Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices.